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SS22-SS215
SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
2.0 AMPS Surface Mount
SMB/DO-214AA
.083(2.10) .077(1.95) .147(3.73) .137(3.48)
FEATURES
For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: o 260 C / 10 seconds at terminals
.187(4.75) .167(4.25) .012(.31) .006(.15)
.103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .209(5.30) .201(5.10) .008(.20) .004(.10)
MECANICAL DATA
Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.093gram
o
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) IF= 2.0A @ 25oC @ 100oC o Maximum DC Reverse Current @ TA =25 C at o Rated DC Blocking Voltage @ TA=125 C Typical Junction Capacitance (Note 3) Typical Thermal Resistance ( Note 2 ) Operating Temperature Range Storage Temperature Range Notes:
Symbol SS 22 20 VRRM 14 VRMS 20 VDC I(AV) IFSM VF IR Cj
R JL R JA TJ
SS 23 30 21 30
SS 24 40 28 40
SS 25 50 35 50 2.0 50
SS 26 60 42 60
SS 29 90 63 90
SS 210 100 70 100
SS Units 215 150 V 105 V 150 V A A
0.5 0.4 0.4 10
0.70 0.65
0.85 0.95 0.70 0.80 0.1 5.0
V mA mA pF
o
130 17 75 -65 to +125 -65 to +150 -65 to +150
C/W
o o
TSTG 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.4" x 0.4"(10mm x 10mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
C C
04/05/2007 Rev.1.00
www.SiliconStandard.com
1
SS22-SS215
RATINGS AND CHARACTERISTIC CURVES (SS22 THRU SS215)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
2.0
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
50 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL
AVERAGE FORWARD CURRENT. (A)
RESISTIVE OR INDUCTIVE LOAD 1.5 SS22-SS24 SS25-SS215
40
30
1.0
20
0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 LEAD TEMPERATURE. ( C)
O
10
0 1 10 NUMBER OF CYCLES AT 60Hz 100
FIG.4-TYPICALREVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS
50 100 SS22-SS24 SS25-SS215 TJ=125 C 10
O
TJ=25 C
O
INSTANTANEOUS FORWARD CURRENT. (A)
10
SS25-SS26
INSTANTANEOUS REVERSE CURRENT. (mA)
SS22-SS24
1
1
TJ=75 C
O
SS29-SS210
0.1
0.1
SS215
0.01
TJ=25 C
O
PULSE WIDTH=300 S 1% DUTY CYCLE
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE. (OC/W)
400
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
100
JUNCTION CAPACITANCE.(pF)
Tj=25 C f=1.0MHz Vsig=50mVp-p
100
O
10
1
10 0.1
SS29-SS215 SS22-SS24 SS25-SS26 1 10 100
0.1
0.01 0.1 1 T, PULSE DURATION. (sec) 10 100
REVERSE VOLTAGE. (V)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly orV implication, in relation to by the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
04/05/2007 Rev.1.00
www.SiliconStandard.com
2

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